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Nakaie, H., Arai, T., Yamamoto, C., Arimoto, K., Yamanaka, J., Nakagawa, K. and Takamatsu, T. Reduction of dislocation Densities of Ge Layers Grown on Sisubstrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers. Journal of Materials Science and Chemical Engineering. (To Be Published)

has been cited by the following article:

• TITLE: STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon

  AUTHORS: Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa

  KEYWORDS: STEM Moiré, Lattice Strain, Ge on Si, Plasma Heating

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 16, 2017

  ABSTRACT: We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.