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Arai, T., Kamimura, K., Yamamoto, C., Shirakura, M., Arimoto, K., Yamanaka, J., Nakagawa, K., Takamatsu, T., Ogino, M., Tachioka, M. and Nakazawa, H. (2017) Ohmic Contact Formation for n+ 4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation. Journal of Materials Science and Chemical Engineering, 5, 35-41. https://doi.org/10.4236/msce.2017.51005

has been cited by the following article:

• TITLE: STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon

  AUTHORS: Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa

  KEYWORDS: STEM Moiré, Lattice Strain, Ge on Si, Plasma Heating

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 16, 2017

  ABSTRACT: We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.