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Schroter, M., et al. (2011) A 4’’ Wafer Photostepper-Based Carbon Nanotube FET Technology for RF Applications. IEEE MTT-S International Microwave Symposium, Baltimore, 5-10 June 2011, 1-4.

has been cited by the following article:

• TITLE: Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application

  AUTHORS: Ramin Nouri-Bayat, Ali Reza Kashani-Nia

  KEYWORDS: Carbon Nanotube Field-Effect Transistor (CNTFET), Transition Frequency, Ultra-Wide Band (UWB), FETToy

  JOURNAL NAME: Engineering, Vol.9 No.1, January 19, 2017

  ABSTRACT: Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.