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Kim, T., Jang, M. and Agelidis, V.G. (2013) Current Status of Silicon Carbide Power Devices and Their Application in Photovoltaic Converters. 2013 IEEE ECCE Asia Downunder (ECCE Asia), Melbourne, Australia, 3-6 June 2013, 555-559. https://doi.org/10.1109/ECCE-Asia.2013.6579152

has been cited by the following article:

• TITLE: Comparison between SiC- and Si-Based Inverters for Photovoltaic Power Generation Systems

  AUTHORS: Yuji Ando, Yasuhiro Shirahata, Takeo Oku, Taisuke Matsumoto, Yuya Ohishi, Masashi Yasuda, Akio Shimono, Yoshikazu Takeda, Mikio Murozono

  KEYWORDS: Silicon Carbide, Solar Cell, Inverter, Photovoltaic Device, Maximum Power Point Tracking, Lithium-Ion Battery

  JOURNAL NAME: Journal of Power and Energy Engineering, Vol.5 No.1, January 13, 2017

  ABSTRACT: 100-W class power storage systems were developed, which comprised spherical Si solar cells, a maximum power point tracking charge control-ler, a lithium-ion battery, and one of two different types of direct current (DC)-alter- nating current (AC) converters. One inverter used SiC met-al-oxide-semicon-ductor field-effect transistors (MOSFETs) as switching devices while the other used Si MOSFETs. In these 100-W class inverters, the ON resistance was considered to have little influence on the efficiency. Nevertheless, the SiC-based inverter exhibited an approximately 3% higher DC-AC conversion efficiency than the Si-based inverter. Power loss analysis indicated that the higher efficiency resulted predominantly from lower switching and reverse recovery losses in the SiC MOSFETs compared with in the Si MOSFETs.