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Saritas, M. and Mckell, H.D. (1988) Comparison of Minority-Carrier Diffusion Length Measurement in Silicon by the Photoconductive Decay and Surface Photo Voltage Methods. Journal of Applied Physics, 63, 4561-4567.

has been cited by the following article:

• TITLE: Minority Carrier Diffusion Coefficient D*(B,T): Study in Temperature on a Silicon Solar Cell under Magnetic Field

  AUTHORS: Richard Mane, Ibrahima Ly, Mamadou Wade, Ibrahima Datta, Marcel S. Douf, Youssou Traore, Mor Ndiaye, Seni Tamba, Grégoire Sissoko

  KEYWORDS: Solar cell, Diffusion Coefficient, Temperature, Magnetic Field

  JOURNAL NAME: Energy and Power Engineering, Vol.9 No.1, January 9, 2017

  ABSTRACT: This work deals with minority carrier diffusion coefficient study in silicon solar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attention to thermal behavior of minority carrier that is better understood with Umklapp process. This study allowed to determine an optimum temperature which led to maximum diffusion coefficient value while magnetic field remained constant.