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Lin, Y.-J., Chen, Y.-M., Cheng, T.-J. and Ker, Q. (2004) Schottky Barrier Height and Nitrogen-Vacancy-Related Defects in Ti Alloyed Ohmic Contacts to n-GaN. J. Appl. Phys., 95, 571-575. https://doi.org/10.1063/1.1633658

has been cited by the following article:

• TITLE: Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs

  AUTHORS: Hayao Kasai, Takuya Oikawa, Tomoyoshi Mishima, Tohru Nakamura

  KEYWORDS: GaN, MISFET, Mg Ion Implantation, Threshold Voltage

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 4, 2017

  ABSTRACT: This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 1013/cm2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.