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Kanamura, M., Ohki, T., Kikkawa, T., Imanishi, K., Imada, T., Yamada, A. and Hara, N. (2010) Enhancement-Mode GaN MIS-HEMTs with n-GaN/i-AlN/n-GaN Triple Cap Layer and High-k Gate Dielectrics. IEEE Electron Lett, 31, 189-191. https://doi.org/10.1109/LED.2009.2039026

has been cited by the following article:

• TITLE: Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs

  AUTHORS: Hayao Kasai, Takuya Oikawa, Tomoyoshi Mishima, Tohru Nakamura

  KEYWORDS: GaN, MISFET, Mg Ion Implantation, Threshold Voltage

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 4, 2017

  ABSTRACT: This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 1013/cm2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.