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Tanimoto, S., Okushi, H. and Arai, K. (2004) Ohmic Contacts for Power Devices on SiC. In: Silicon Carbide, Springer, Berlin Heidelberg, 652-658. https://doi.org/10.1007/978-3-642-18870-1_27

has been cited by the following article:

• TITLE: Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation

  AUTHORS: Tetsuji Arai, Kazuki Kamimura, Chiaya Yamamoto, Mai Shirakura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu, Masaaki Ogino, Masaaki Tachioka, Haruo Nakazawa

  KEYWORDS: Selective Heating, Nickel Silicide Electrode, Hydrogen Plasma, Ohmic Contact, SiC

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 4, 2017

  ABSTRACT: We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n+4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.