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Kakiuchi, H., Nakahama, Y., Ohmi, H., Yasutake, K., Yoshii, K. and Mori Y. (2005) Investigation of Deposition Characteristics and Properties of High-rate Deposited Silicon Nitride Films Prepared by Atmospheric Pressure Plasma Chemical Vapor Deposition. Thin Solid Films, 479, 17-23.
http://dx.doi.org/10.1016/j.tsf.2004.11.104

has been cited by the following article:

• TITLE: IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition

  AUTHORS: Shin-ichi Kobayashi

  KEYWORDS: Silicon Nitride, PECVD, VHF, FTIR

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.6 No.4, November 2, 2016

  ABSTRACT: Hydrogenated amorphous silicon nitride (a-SiNx:H) films have been grown from a SiH4–N2 gas mixture through very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) at 50℃. The films are dense and transparent in the visible region. The peak frequency of the Si–N stretching mode in the IR absorption spectrum increases with increasing N–H bond density, which is similar to the behavior of a-SiNx:H films grown from SiH4–NH3 gas. During storage in a dry air atmosphere, the Si–O absorption increases. A large shift in the peak frequency of the Si–N stretching mode in the initial stage of oxidation, which is higher than the shift expected from the increase in the N–H bond density, is mainly caused by the change in the sum of electronegativity of nearest neighbors around the Si–N bond due to the increase in the Si–O bond density.