TITLE:
IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition
AUTHORS:
Shin-ichi Kobayashi
KEYWORDS:
Silicon Nitride, PECVD, VHF, FTIR
JOURNAL NAME:
World Journal of Condensed Matter Physics,
Vol.6 No.4,
November
2,
2016
ABSTRACT: Hydrogenated
amorphous silicon nitride (a-SiNx:H) films have been grown from a
SiH4–N2 gas mixture through very high frequency (VHF)
plasma-enhanced chemical vapor deposition (PECVD) at 50℃. The films are dense
and transparent in the visible region. The peak frequency of the Si–N
stretching mode in the IR absorption spectrum increases with increasing N–H
bond density, which is similar to the behavior of a-SiNx:H films
grown from SiH4–NH3 gas. During storage in a dry air
atmosphere, the Si–O absorption increases. A large shift in the peak frequency
of the Si–N stretching mode in the initial stage of oxidation, which is higher
than the shift expected from the increase in the N–H bond density, is mainly
caused by the change in the sum of electronegativity of nearest neighbors around
the Si–N bond due to the increase in the Si–O bond density.