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Chen, C.-H., Keller, S., Haberer, E., Zhang, L.D., DenBaars, S.P., Hu, E.L., Mishra, U.K. and Wu, Y.F. (1999) Cl2 Reactive Ion Etching for Gate Recessing of AlGaN/GaN Field-Effect Transistors. Journal of Vacuum Science & Technology B: Microelectronics Processing, 17, 2755-2758.
http://dx.doi.org/10.1116/1.591058

has been cited by the following article:

• TITLE: Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT

  AUTHORS: Palanichamy Vimala, L. Vidyashree

  KEYWORDS: HEMT, GaN/AlGaN, 2DEG, Drain Current, Noise Power Spectrum Density

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.4 No.10, October 25, 2016

  ABSTRACT: Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.