Article citationsMore>>

Pearton, S.J., Abernathy, C.R., Thaler, G.T., Frazier, R.M., Norton, D.P., Ren, F., Park, Y.D., Zavada, J.M., Buyanova, I.A., Chen, W.M. and Hebard, A.F. (2004) Wide Bandgap GaN-Based Semiconductors for Spintronics. Journal of Physics: Condensed Matter, 16, R209.
http://dx.doi.org/10.1088/0953-8984/16/7/r03

has been cited by the following article:

• TITLE: ZnO Films Deposited on Glass by Means of DC Sputtering

  AUTHORS: Masato Ohmukai, Takuya Nakagawa, Ayumu Matsumoto

  KEYWORDS: ZnO Film, DC Sputtering, Annealing, X-Ray Analysis

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.4 No.10, October 10, 2016

  ABSTRACT: ZnO films were deposited on glass substrates by means of a direct current (DC) sputtering technique. The physical properties of the films were investigated on the basis of X-ray diffraction measurements. It was found that as-deposited films show c-axis oriented crystal normal to the surface with the extension of c axis by 1.27% that is estimated from the shift of the peak in the X-ray diffraction pattern. Post-deposition annealing in air at higher than 400℃ eliminates the shift and sharpens the diffraction peak structure at the same time. The electrical resistivity continues to decrease from 500 Ω•cm down to 0.6 Ω•cm by annealing as high as 600℃.