Article citationsMore>>

Gulyamov, G. and Gulyamov, A.G. (2015) Semiconductors, 49, 819-822.
http://dx.doi.org/10.1134/S1063782615060111

has been cited by the following article:

• TITLE: Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

  AUTHORS: Gafur Gulyamov, Abdurasul G. Gulyamov, Feruza R. Muhitdinova

  KEYWORDS: Recombination Centers, Phase Portrait, Generation of Charge Carriers, Recombination of Charge Carriers, Forbidden Zone, Absorption Coefficient

  JOURNAL NAME: Journal of Modern Physics, Vol.7 No.13, September 14, 2016

  ABSTRACT: Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.