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Kakiuchi, H., Ohmi, H., Yamada, T., Tamaki, S., Sakaguchi, T., Lin, W.C. and Yasutake, K. (2015) Characterization of Si and SiOx Films Deposited in Very High-Frequency Excited Atmospheric-Pressure Plasma and Their Application to Bottom-Gate Thin Film Transistors. Physica Status Solidia, 212, 1571-1577.
http://dx.doi.org/10.1002/pssa.201532328

has been cited by the following article:

• TITLE: Ellipsometric Study of SiOx Thin Films by Thermal Evaporation

  AUTHORS: David Salazar, Roberto Soto-Molina, Eder German Lizarraga-Medina, Marco Antonio Felix, Nicola Radnev, Heriberto Márquez

  KEYWORDS: Ellipsometry, Refraction Index, SiOx Thin Films

  JOURNAL NAME: Open Journal of Inorganic Chemistry, Vol.6 No.3, July 5, 2016

  ABSTRACT: This paper presents a study of amorphous SiOx thin films by means of Variable Angle Spectroscopic Ellipsometry (VASE) technique. Tauc Lorentz, Lorentz and Cauchy models have been used to obtain physical thickness and complex refractive index (n and k) from experimental data. In order to obtain a wide range to x stoichiometry values, the films were prepared by vacuum thermal evaporation of SiO on glass substrates, under different and controlled deposition conditions.