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Ma, H., Jin, Z., Wang, L. and Ma, G. (2011) Electron Spin Relaxation in Intrinsic Bulk InP Semiconductor. Journal of Applied Physics, 109, Article ID: 023105. http://dx.doi.org/10.1063/1.3533965

has been cited by the following article:

• TITLE: Density Dependence of Electron Spin Relaxation Time in GaA

  AUTHORS: Nam Lyong Kang

  KEYWORDS: Spintronics, Electron-Phonon Interaction, Projection-Reduction Method

  JOURNAL NAME: Open Journal of Applied Sciences, Vol.6 No.6, June 27, 2016

  ABSTRACT: The electron density dependence of the electron spin relaxation time in a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling was calculated using the formula for electron spin resonance derived by the projection-reduction method. The electron spin relaxation time in GaAs increased with increasing electron density, and the electron density was found to affect the electron spin relaxation differently according to temperature. The electron spin in GaAs was relaxed mainly by optical phonon scattering at high electron densities and piezoelectric phonon scattering at relatively low electron densities.