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V. I. Talanin and I. E. Talanin, “Kinetics Model of Growth and Coalescence of Oxygen and Carbon Precipitates during Cooling of As-Grown Silicon Crystals”, Physics of the Solid State, Vol. 53. No. 1, 2011, pp. 119-126. doi:10.4028/www.scientific.net/DDF.230-232.177

has been cited by the following article:

• TITLE: A New Method for Research of Grown-In Microdefects in Dislocation-Free Silicon Single Crystals

  AUTHORS: V.I Talanin, I.E Talanin, N.Ph Ustimenko

  KEYWORDS: Silicon, Grown-In Microdefects, Precipitate, Vacancy Microvoid, Interstitial Dislocation Loop

  JOURNAL NAME: Journal of Crystallization Process and Technology, Vol.1 No.2, August 1, 2011

  ABSTRACT: As a virtual experimental device for analysis and calculation of grown-in microdefects formation in undoped silicon dislocation-free single crystals the software is proposed. The software is built on the basis on diffusion model of formation, growth and coalescence of grown-in microdefects. Diffusion model describes kinetics of defect structure changes during cooling after growth on crystallization temperature to room temperature. The software allows the use of personal computer to investigate the defect structure of dislocation-free silicon single crystals with a diameter on 30 mm to 400 mm grown by floating-zone and Czochralski methods.