Article citationsMore>>

Пархоменко, Ю.Н., Белогорохов, А.И., Герасименко, Н.Н. and Иржак, А.В. and Лисаченко, М.Г. (2004) Свой-ства самоорганизованных SiGe-наноструктур, полученных методом ионной имплантации. ФТП, 38, 593-597.

has been cited by the following article:

• TITLE: Study of Quantitative and Qualitative Characteristics of Nickel Clusters and Semiconductor Structures

  AUTHORS: Elyor Bahriddinovich Saitov

  KEYWORDS: Single Crystalline Silicon, Nanoscale Structures, Self-Organization of Clusters of Impurity Atoms, Ni Clusters

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.4 No.5, May 27, 2016

  ABSTRACT: The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.