TITLE:
Study of Quantitative and Qualitative Characteristics of Nickel Clusters and Semiconductor Structures
AUTHORS:
Elyor Bahriddinovich Saitov
KEYWORDS:
Single Crystalline Silicon, Nanoscale Structures, Self-Organization of Clusters of Impurity Atoms, Ni Clusters
JOURNAL NAME:
Journal of Materials Science and Chemical Engineering,
Vol.4 No.5,
May
27,
2016
ABSTRACT: The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.