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Maekawa, M., Kawasuso, A., Yoshikawa, M., Miyashita, A., Suzuki, R. and Ohdaira, T. (2006) Structure of SiO2/4H-SiC Interface Probed by Positron Annihilation Spectroscopy. Physical Review B, 73, Article ID: 014111.

has been cited by the following article:

• TITLE: Metal-Semiconductor Interfaces Investigated by Positron Annihilation Spectroscopy

  AUTHORS: Abdulnasser S. Saleh

  KEYWORDS: Positron Annihilation, Interface, Metal-Semiconductor, Defects

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.6 No.2, May 5, 2016

  ABSTRACT: Variable-energy positron annihilation spectroscopy has been applied to study interfaces in Al/Si, Au/Si and Au/GaAs structures. Computational fittings of ROYPROF program were used to analyze Doppler broadening results in order to determine kinds of regions that positrons were likely to sample. The interfaces were found acting as a capturing thin layer with negligible positrons stopped in them and their characteristics came only from positrons diffusing to these interfaces, the positron work function of these materials were taken into consideration. In all fittings, the interfaces are found to have 1 nm thickness and act as an absorbing sink for all thermal positrons diffusing towards them, and this indicates either the existence of open volume defects or a weakness of known theoretical models for positron affinities. The result is supported by measurements obtained by applying external electric fields on Al/Si sample. Theoretical fittings have clearly demonstrated the sensitivity of interfaces in these attempts and their importance in data analyzing and in developing of fitting cods.