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Di, C.A., Wei, D., Yu, G., Liu, Y., Guo, Y. and Zhu, D. (2008) Patterned Graphene as Source/Drain Electrodes for Bottom-Contact Organic Field-Effect Transistors. Advanced Materials, 20, 3289-3293. http://dx.doi.org/10.1002/adma.200800150

has been cited by the following article:

• TITLE: Heteroatom Doped Multi-Layered Graphene Material for Hydrogen Storage Application

  AUTHORS: Arjunan Ariharan, Balasubramanian Viswanathan, Vaiyapuri Nandhakumar

  KEYWORDS: Hydrogen Storage, Carbon Materials, Graphene Materials, Heteroatom Doped Graphene, Phosphorous Doped Graphene, Hydrogen Storage Capacity

  JOURNAL NAME: Graphene, Vol.5 No.2, March 23, 2016

  ABSTRACT: A variety of distinctive techniques have been developed to produce graphene sheets and their functionalized subsidiaries or composites. The production of graphene sheets by oxidative exfoliation of graphite can be a suitable route for the preparation of high volumes of graphene derivatives. P-substituted graphene material is developed for its application in hydrogen sorption in room temperature. Phosphorous doped graphene material with multi-layers of graphene shows a nearly ~2.2 wt% hydrogen sorption capacity at 298 K and 100 bar. This value is higher than that for reduced graphene oxide (RGO without phosphorous).