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E. A. Anagnostakis, “Photoconductive Gain of Semiconductor Epitaxial Layers,” Physical Status Solidi A, Vol. 127, No. 1, 1991, pp. 153-158. doi:10.1002/pssa.2211270116

has been cited by the following article:

• TITLE: On Radioactivity–Exposed Nanophotodetector Optoreliability

  AUTHORS: Emmanuel A. Anagnostakis

  KEYWORDS: Radiation-Hardness, Optoelectronic Reliability, Photodetectors, Photoresponsive Nanointerfaces, Quantum Efficiency & Detection Yield

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.7, July 29, 2011

  ABSTRACT: The optoelectronic reliability of representative radioactivity-exposed nanophotodetectors and the degree of functionally tolerable radioactivity-induced responsivity de-emphasis, against increasing cumulative radioactivity-dose, is notionally considered and modelled, with a view towards experimental findings concerning p-i-n photosensors being exposed to regulated successive (α, β)-particle bombardments.