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A. Meinertzhgen, C. Petit, M. Jourdain and F. Mondon, “Anode Hole Injection and Stress Induced Leakage Current Decay in Metal-Oxide-Semiconductor Capacitors,” Solid-State Electronics, Vol. 44, No. 4, 2000, pp. 623-630. doi:10.1016/S0038-1101(99)00309-3

has been cited by the following article:

• TITLE: New Analysis to Measure the Capacitance and Conductance of MOS Structure toward Small Size of VLSI Circuits

  AUTHORS: Wagah Farman Mohammad

  KEYWORDS: Thin Film R-Y-NR Network, MOS R-Y-NR Network, MOS-VLSI Circuits, MOS Capacitance

  JOURNAL NAME: Circuits and Systems, Vol.2 No.3, July 6, 2011

  ABSTRACT: In this research thin film layers have been prepared at alternate layers of resistive and dielectric deposited on appropriate substrates to form four – terminal R-Y-NR network. If the gate of the MOS structures deposited as a strip of resistor film like NiCr, the MOS structure can be analyzed as R-Y-NR network. A method of analysis has been proposed to measure the shunt capacitance and the shunt conductance of certain MOS samples. Mat lab program has been used to compute shunt capacitance and shunt conductance at different frequencies. The results computed by this method have been compared with the results obtained by LCR meter method and showed perfect coincident with each other.