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Vanyushin, I.V., Gergel’, V.A., Zimoglyad, V.A., Lependin, A.V. and Tishin, Yu, I. (2006) Profiling the Boron Distribution in Asymmetric n+-p Silicon Photodiodes and a New Concept for Creating Selectively Sensitive Photocells for Megapixel Color-Image Receivers. Physical Processes in Electron Devices, Journal of Communications Technology and Electronics, 51, 1425-1430.
http://link.springer.com/article/10.1134%2FS106422690612014X#/close

has been cited by the following article:

• TITLE: On the Model of Spectral Analysis of Optical Radiation

  AUTHORS: Surik Khudaverdyan, Taron Hovhannisyan, Nazeli Meliqyan, Narine Mehrabyan, Stepan Tsaturyan, Mane Khachatryan, Ashok Vaseashta

  KEYWORDS: Spectral Analysis, Monitoring, Photosensitivity, Photodiode

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.8 No.2, February 25, 2016

  ABSTRACT: A silicon photodiode structure was studied for the spectral analysis of optical radiation. The structure consists of oppositely-directed barriers. We developed a model of the electronic processes occurring in the structure. The possibilities of the selection of separate waves from the integral flux of radiation, the wave absorption and the quantitative spectral analysis of the waves of the model for contaminated environment were investigated. An algorithm was developed for carrying out the spectral analysis without the preliminary calibration, and for promoting a possible creation of a new type of a portable semiconductor spectrophotometer.