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Jiang, F., Stavola, M., Rohatgi, A., Kim, D., Holt, J., Atwater, H. and Kalejs, J. (2003) Hydrogenation of Si from SiNx:H Films: Characterization of H Introduced into the Si. Applied Physics Letters, 83, 931-933.
http://dx.doi.org/10.1063/1.1598643

has been cited by the following article:

• TITLE: Opto-Structural Properties of Silicon Nitride Thin Films Deposited by ECR-PECVD

  AUTHORS: Hicham Charifi, Abdelilah Slaoui, Jean Paul Stoquert, Hassan Chaib, Abdelkrim Hannour

  KEYWORDS: ECR-PECVD, Silicon Nitride

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.6 No.1, December 30, 2015

  ABSTRACT: Amorphous hydrogenated silicon nitride thin films a-SiNx:H (abbreviated later by SiNx) were deposited by Electron Cyclotron Resonance plasma enhanced chemical vapor deposition method (ECR-PECVD). By changing ratio of gas flow (R = NH3/SiH4) in the reactor chamber different stoichiometric layers x = [N]/[Si] ([N] and [Si] atomic concentrations) are successfully deposited. Part of the obtained films has subsequently undergone rapid thermal annealing RTA (800°C/1 s) using halogen lamps. Optical and structural characterizations are then achieved by spectroscopic ellipsometry (SE), ion beam analysis and infrared absorption techniques. The SE measurements show that the tuning character of their refractive index n(λ) with stoichiometry x and their non-absorption properties in the range of 250 - 850 nm expect for Si-rich SiNx films in the ultraviolet UV range. The stoichiometry x and its depth profile are determined by Rutherford backscattering spectrometry (RBS) while the hydrogen profile (atomic concentration) is determined by Elastic Recoil Detection Analysis (ERDA). Vibrational characteristics of the Si-N, Si-H and N-H chemical bonds in the silicon nitride matrix are investigated by infrared absorption. An atomic hydrogen fraction ranging from 12% to 22% uniformly distributed as evaluated by ERDA is depending inversely on the stoichiometry x ranging from 0.34 to 1.46 as evaluated by RBS for the studied SiNx films. The hydrogen loss after RTA process and its out-diffusion depend strongly on the chemical structure of the films and less on the initial hydrogen concentration. A large hydrogen loss was noted for non-thermally stable Si-rich SiNx films. Rich nitrogen films are less sensitive to rapid thermal process.