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Ablyazimova, N.A., Veynger, A.I. and Pitanov, V.S. (1988) The Electrical Properties of Silicon p-n-Junctions in Strong Microwave Fields. Semiconductors, 22, 2001-2007.

has been cited by the following article:

• TITLE: Active and Capacitive Conductance of the Diode in a Strong Microwave Field

  AUTHORS: Muhammadjon Gulomkodirovich Dadamirzaev

  KEYWORDS: Hot Electrons, The Microwave Field, The Active and Capacitive Conductivity, Fault Current, p-n-Junction

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.3 No.12, December 29, 2015

  ABSTRACT: It is shown that the mean value of the capacitive current arising in the p-n-junction in a microwave field is zero, and the average value of the active current independently of the current value is different from zero and is equal to the current generated by the diode.