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Zou, D.F., Xie, S.H., Liu, Y.Y., Lin, J.G. and Li, J.Y. (2013) Electronic Structure and Thermoelectric Properties of Half-Heusler Zr0.5Hf0.5NiSn by First-Principles Calculations. Journal of Applied Physics, 113, Article ID: 193705.
http://dx.doi.org/10.1063/1.4804939

has been cited by the following article:

• TITLE: First-Principles Investigation of the Effect of M-Doped (M = Zr, Hf) TiCoSb Half-Heusler Thermoelectric Material

  AUTHORS: Gaili Sun, Yuanyuan Li, Xinxin Zhao, Yiming Mi, Lili Wang

  KEYWORDS: Half-Heusler Compound, Thermoelectric, First-Principles, Electronic Structure

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.3 No.12, December 29, 2015

  ABSTRACT: The M-doping (M = Zr, Hf) effects on the electronic structures and thermoelectric performance of TiCoSb were studied by first-principles calculations. The band structure analysis shows that substituting Ti with M does not change the band structures of these systems significantly. Most of the M-doped systems have a lower band gap value than that of TiCoSb; especially Ti0.5Zr0.5CoSb has the lowest energy band gap value of 0.971 eV. Besides, the amplitudes of the density of states in the region of the valence bands for M-doped systems show a similar but slightly higher value than TiCoSb. Those suggest that these compounds could have better thermoelectric performance than TiCoSb. The phonon dispersion relations show that the larger mass of Zr/Hf with respect to Ti lowers the optical modes and induces mixing with the acoustic branches. Our calculations offer a valuable insight on how to characterize complicated crystal structures of thermoelectric materials and optimize the material composition.