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Ng, H.T., Han, J., Yamada, T., Nguyen, P., Chen, Y.P. and Meyyappan, M. (2004) Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor. Nano Letters, 4, 1247-1452.
http://dx.doi.org/10.1021/nl049461z

has been cited by the following article:

• TITLE: Diameter Dependent Ultrasonic Characterization of InAs Semiconductor Nanowires

  AUTHORS: Mohit Gupta, Punit K. Dhawan, Satyendra Kumar Verma, Raja Ram Yadav

  KEYWORDS: Ultrasonic Attenuation, Nanowires, Elastic Constants, Thermal Relaxation Time, Thermal Conductivity

  JOURNAL NAME: Open Journal of Acoustics, Vol.5 No.4, December 29, 2015

  ABSTRACT: In this paper, we report the diameter dependent ultrasonic characterization of wurtzite structured InAs semiconductor nanowires at the room temperature. In this work, we have calculated the non-linear higher order elastic constants of InAs nanowires validating the interaction potential model. The ultrasonic attenuation and velocity in the nanowires are determined using the elastic constants for different diameters of the nanowires. Where possible, the results are compared with the experiments. Finally, we have established the correlation between the size dependent thermal conductivity and the ultrasonic attenuation of the nanowires.