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Chen, C.Y., Wang, M.K., Li, J.Y., Pootrakulchote, N., Alibabaei, L., Ngoc-le, C., Decoppet, J., Tsai, J., Grätzel, C., Wu, C., Zakeeruddin, S.M. and Grätze, M. (2009) Highly Efficient Light-Harvesting Ruthenium Sensitizer for Thin-Film Dye-Sensitized Solar Cells. ACS Nano, 3, 3103-3109.
http://dx.doi.org/10.1021/nn900756s

has been cited by the following article:

• TITLE: Electric-Field-Assisted Growth of Ga-Doped ZnO Nanorods Arrays for Dye-Sensitized Solar Cells

  AUTHORS: Jinxia Duan, Qiu Xiong, Jinghua Hu, Hao Wang

  KEYWORDS: Ga-Doped ZnO, Electric-Field-Assisted, Wet Chemical Method, Dye-Sensitized Solar Cells

  JOURNAL NAME: Journal of Power and Energy Engineering, Vol.3 No.12, December 18, 2015

  ABSTRACT: A photoanode with Ga-doped ZnO nanorods has been prepared on F-doped SnO2 (FTO) coated glass substrate and its application in dye-sensitized solar cells (DSSCs) has been investigated. Ga-doped ZnO nanorods have been synthesized by an electric-field-assisted wet chemical approach at 80?C. Under a direct current electric field, the nanorods predominantly grow on cathodes. The results of the X-ray photoelectron spectroscopy and photoluminescence verify that Ga dopant is successfully incorporated into the ZnO wurtzite lattice structure. Finally, employing Ga-doped ZnO nanorods with the length of ~5 μm as the photoanode of DSSCs, an overall energy conversion efficiency of 2.56% is achieved. The dramatically improved performance of Ga-doped ZnO based DSSCs compared with that of pure ZnO is due to the higher electron conductivity.