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Akopyan, E.A., Veynger, A.I. and Paritssky, L.G. (1974) Photovoltage Hot Carriers at the pn-Junction. Semiconductors, 8, 754-759.

has been cited by the following article:

• TITLE: EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light

  AUTHORS: Gafur Gulyamov, Muhammadjon Gulomkodirovich Dadamirzaev, Nosir Yusupjanovich Sharibayev, Ne’matjon Zokirov

  KEYWORDS: photocurrent lasing and recombination currents, hot electrons, the microwave field, light, p-n-junction

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.7 No.12, December 10, 2015

  ABSTRACT: It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.