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Zhang, X.B., Wang, X.L., Xiao, H.L., Yang, C.B., Ran, J.X., Wang, C.M., Hou, Q.F. and Li, J.M. (2007) Simulation of In0.65Ga0.35 N Single-Junction Solar Cell. Journal of Physics D: Applied Physics, 40, 7335-7338 (s.d.).

has been cited by the following article:

• TITLE: Characterization of InGaN Solar Cells

  AUTHORS: Nor Bochra, Bousaid Abdelhak

  KEYWORDS: Silvaco, Indium Gallium Nitride, Solar Cells, Numerical Simulation, Atlas/Silvaco

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.3 No.11, November 30, 2015

  ABSTRACT: The III-V materials are extensively studied for optoelectronic applications in the blue and UV spectral regions. InGaN ternary alloy is considered for its wide spectral coverage, good electrical characteristics and appreciable resistance to high electrical currents. For this purpose, the operation of InGaN photovoltaic cells was studied by 2D numerical simulation under AM1.5 spectrum illumination, using the software Silvaco and the two environments Athena/Atlas.