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Chawla, G.B.R. and Gummel, H.K. (1971) Transition Region Capacitance of Diffusion p-n Junction. IEEE Transactions on Electron Devices, 18, 178-195.
http://dx.doi.org/10.1109/T-ED.1971.17172

has been cited by the following article:

• TITLE: Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illumination

  AUTHORS: Gokhan Sahin, Moustapha Dieng, Mohamed Abderrahim Ould El Moujtaba, Moussa Ibra Ngom, Amary Thiam, Grégoire Sissoko

  KEYWORDS: Vertical Parallel Junction, Wavelength, Capacitance, Bode and Nyquist Diagrams

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.3 No.11, November 30, 2015

  ABSTRACT: The aim of this study is to show the influence of the wavelength on the electrical parameters of vertical parallel junction silicon solar cell by use of impedance spectroscopy technique. The Bode diagrams of the diffusion capacitance are shown for different wavelengths while the solar cell operates under both open circuit and short circuit conditions. The Nyquist diagram of the diffusion capacitance has shown the extension of the space charge region for various wavelengths.