TITLE:
Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation
AUTHORS:
El Hadji Ndiaye, Gokhan Sahin, Moustapha Dieng, Amary Thiam, Hawa Ly Diallo, Mor Ndiaye, Grégoire Sissoko
KEYWORDS:
Silicon Solar Cell, Frequency Modulation, Intrinsic Recombination Velocity at the Junction, Irradiation Energy
JOURNAL NAME:
Journal of Applied Mathematics and Physics,
Vol.3 No.11,
November
30,
2015
ABSTRACT: In this study, a method for determining the intrinsic recombination velocity at the junction of a silicon solar cell is presented. The expression of intrinsic recombination velocity at the junction was established under irradiation in frequency modulation. Based on this expression, an electrical model of the intrinsic recombination velocity at the junction is presented.