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Marquardt, O., Boeck, S., Freysoldt, C., Hickel, T., Schulz, S., Neu-gebauer, J. and O’Reilly, E.P. (2014) A Generalized Plane-Wave Formulation of k?p Formalism and Conti-nuum-Elasticity Approach to Elastic and Electronic Properties of Semiconductor Nanostructures. Comput. Mater. Sci., 95, 280-287. http://dx.doi.org/10.1016/j.commatsci.2014.06.047

has been cited by the following article:

• TITLE: Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study

  AUTHORS: Zhiwei Zhang, Guoqing Miao, Hang Song, Hong Jiang, Zhiming Li, Dabing Li, Xiaojuan Sun, Yiren Chen

  KEYWORDS: InGaAs Detector, Near-Infrared, High Indium Content, Dark Current

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.3 No.4B, November 20, 2015

  ABSTRACT: In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector are also compared and discussed. GaAs-based device shows a significant enhancement in detector with a better performance for a InGaAs photodetector compared to InP- based device. In addition, our results show that the device performance is influenced by the conduction band offset. This work proves that InAlAs/InGaAs/GaAs structure is a promising candidate for high performance detector with optimally tuned band gap.