TITLE:
Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study
AUTHORS:
Zhiwei Zhang, Guoqing Miao, Hang Song, Hong Jiang, Zhiming Li, Dabing Li, Xiaojuan Sun, Yiren Chen
KEYWORDS:
InGaAs Detector, Near-Infrared, High Indium Content, Dark Current
JOURNAL NAME:
World Journal of Engineering and Technology,
Vol.3 No.4B,
November
20,
2015
ABSTRACT: In this work, we investigate
the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6
μm. The influences of different substrate materials on the optoelectronic properties
of InGaAs detector are also compared and discussed. GaAs-based device shows a
significant enhancement in detector with a better performance for a InGaAs
photodetector compared to InP- based device. In addition, our results show that
the device performance is influenced by the conduction band offset. This work
proves that InAlAs/InGaAs/GaAs structure is a promising candidate for high
performance detector with optimally tuned band gap.