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Gouye, A., Kermarrec, O., Halimaoui, A., et al. (2009) Low-Temperature RPCVD of Si, SiGe Alloy, and Si-y Cy Films on Si Substrates Using Trisilane. Journal of Crystal Growth, 311, 3522-3527. http://dx.doi.org/10.1016/j.jcrysgro.2009.04.011

has been cited by the following article:

• TITLE: A Ge-Graded SiGe HBT with β > 100 and fT = 67 GHz

  AUTHORS: Jing Zhang, Yonghui Yang, Guangbing Chen, Yuxin Wang, Dongbing Hu, Kaizhou Tan, Wei Cui, Zhaohuan Tang

  KEYWORDS: RPCVD, SiGe, HBT, Graded Profile, SiGe BiCMOS

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.3 No.4B, November 20, 2015

  ABSTRACT: By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0.35 μm SiGe BiCMOS process technology, and made the device give good DC characteristics (β > 100) and high-frequency performance (fT = 67 GHz), thus meeting the requirements for technical specifications in 0.35 μm SiGe BiCMOS process technology.