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Miura, Y., Katsumi, Y., Tanaka, K., Oda, S., Habuka, H., Gao, Y., Fukai, Y., Fukae, K., Kato, T., Okumura, H. and Arai, K. (2008) Etching Rate Behavior of 4H-Silicon Carbide Using Chlorine Trifluoride Gas. ECS Transactions, 13, 39-52.
http://dx.doi.org/10.1149/1.2913079

has been cited by the following article:

• TITLE: Metal Fluorides Produced Using Chlorine Trifluoride Gas

  AUTHORS: Hitomi Matsuda, Hitoshi Habuka, Yuuki Ishida, Toshiyuki Ohno

  KEYWORDS: Metal Fluoride, Metal Oxide, Chlorine Trifluoride, Synthesis, Coating Film Material

  JOURNAL NAME: Journal of Surface Engineered Materials and Advanced Technology, Vol.5 No.4, October 29, 2015

  ABSTRACT: For developing coating materials, the fluorides of scandium, lanthanum, strontium, barium, magnesium and aluminum were produced from their oxides and chlorides by means of exposure to chlorine trifluoride gas at temperatures between room temperature and 700°C. The metal chlorides could be easily fluorinated even at room temperature, while the metal oxides required temperatures higher than 300?C. After the heating in ambient hydrogen at 1100°C, the fluorides of lanthanum and barium showed very low weight losses at 1100°C, although the weights of the other fluorides significantly decreased. These materials may work as protective films against corrosive and high temperature environments, particularly when using the chlorine trifluoride gas.