TITLE:
The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor
AUTHORS:
Gafur Gulyamov, A. G. Gulyamov, A. Q. Ergashev, B. T. Abdulazizov
KEYWORDS:
Phase Portraits, The Generation of Charge Carriers, The Recombination of Charge Carriers
JOURNAL NAME:
Journal of Modern Physics,
Vol.6 No.13,
October
29,
2015
ABSTRACT: Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10-3 s and capture cross sections of 10-16 sm2. For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.