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Blakemore, J.S. (1974) The Theory of the Rate of Recombination in Semiconductors. In: Landsberg, P., Ed., Chapter 16 in the Book: Problems of Thermodynamics and Statistical Physics, Mir, Moscow, 399-430. (In Russian)

has been cited by the following article:

• TITLE: The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

  AUTHORS: Gafur Gulyamov, A. G. Gulyamov, A. Q. Ergashev, B. T. Abdulazizov

  KEYWORDS: Phase Portraits, The Generation of Charge Carriers, The Recombination of Charge Carriers

  JOURNAL NAME: Journal of Modern Physics, Vol.6 No.13, October 29, 2015

  ABSTRACT: Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10-3 s and capture cross sections of 10-16 sm2. For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.