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Nia, W.X., Lyutovich, K., Alami, J., Tengstedt, C., Bauer, M. and Kasper E. (2001) X-Ray Reciprocal Space Mapping Studies of Strain Relaxation in Thin SiGe Layers (≤100 nm) Using a Low Temperature Growth Step. Journal of Crystal Growth, 227-228, 756-760. http://dx.doi.org/10.1016/S0022-0248(01)00821-1

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