TITLE:
The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO2 Structures
AUTHORS:
Aram A. Sahakyan, Hrant N. Yeritsyan, Vachagan V. Harutunyan, Hamlet S. Karayan, Vahan A. Sahakyan
KEYWORDS:
Metal-Insulator-Semiconductor (MIS) Structures, Radiation Effects, Surface States (SS) Density, Insulator-Semiconductor (I-S) Interface, Annealing
JOURNAL NAME:
Journal of Modern Physics,
Vol.6 No.11,
September
24,
2015
ABSTRACT: The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.