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Winokur, P.S., McGarrity, L.M. and Boesch, H.E. (1976) IEEE Transactions on Nuclear Science, 5-23, 1580-1585.

has been cited by the following article:

• TITLE: The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO2 Structures

  AUTHORS: Aram A. Sahakyan, Hrant N. Yeritsyan, Vachagan V. Harutunyan, Hamlet S. Karayan, Vahan A. Sahakyan

  KEYWORDS: Metal-Insulator-Semiconductor (MIS) Structures, Radiation Effects, Surface States (SS) Density, Insulator-Semiconductor (I-S) Interface, Annealing

  JOURNAL NAME: Journal of Modern Physics, Vol.6 No.11, September 24, 2015

  ABSTRACT: The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.