TITLE:
Field Electron-Emission from a-CNx:H Films Formed on Al Films Using Supermagnetron Plasma CVD
AUTHORS:
Haruhisa Kinoshita, Sho Suzuki, Ryouhei Taguchi, Hiroki Takeuchi
KEYWORDS:
Supermagnetron Plasma, Chemical Vapor Deposition, Amorphous Carbon Nitride, Field Emission
JOURNAL NAME:
Journal of Modern Physics,
Vol.6 No.11,
September
22,
2015
ABSTRACT: Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si, Al films deposited on n-Si (Al/n-Si) and glass (SiO2) (Al/glass) substrates, using pulsed rf supermagnetron plasma chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. The rf powers (13.56 MHz) of both the upper and lower electrodes were modulated by a 2.5-kHz pulse at a duty ratio of 12.5%. N2 gas concentration was controlled at 70%. The optical band gap of a-CNx:H films was about 0.75 eV. The a-CNx:H films deposited on substrates of p-Si, Al/n-Si and Al/glass showed low threshold emission electric fields (ETH) of 10, 13 and 12 V/μm, respectively. The a-CNx:H film deposited on low-cost Al film (Al/glass) showed a sufficiently low ETH of 12 V/μm, eliminating the need for high-cost p-Si substrates.