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Lin, C.M., Chang, S.J., Yokoyama, M., Chuang, F.Y., Tsai, C.H., Wang, W.C. and Lin, I.N. (1999) Japanese Journal of Applied Physics, 38, 890-893.
http://dx.doi.org/10.1143/JJAP.38.890

has been cited by the following article:

• TITLE: Field Electron-Emission from a-CNx:H Films Formed on Al Films Using Supermagnetron Plasma CVD

  AUTHORS: Haruhisa Kinoshita, Sho Suzuki, Ryouhei Taguchi, Hiroki Takeuchi

  KEYWORDS: Supermagnetron Plasma, Chemical Vapor Deposition, Amorphous Carbon Nitride, Field Emission

  JOURNAL NAME: Journal of Modern Physics, Vol.6 No.11, September 22, 2015

  ABSTRACT: Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si, Al films deposited on n-Si (Al/n-Si) and glass (SiO2) (Al/glass) substrates, using pulsed rf supermagnetron plasma chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. The rf powers (13.56 MHz) of both the upper and lower electrodes were modulated by a 2.5-kHz pulse at a duty ratio of 12.5%. N2 gas concentration was controlled at 70%. The optical band gap of a-CNx:H films was about 0.75 eV. The a-CNx:H films deposited on substrates of p-Si, Al/n-Si and Al/glass showed low threshold emission electric fields (ETH) of 10, 13 and 12 V/μm, respectively. The a-CNx:H film deposited on low-cost Al film (Al/glass) showed a sufficiently low ETH of 12 V/μm, eliminating the need for high-cost p-Si substrates.