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Ha, W., Zhang, J.-C., Zhao, S.-L., Ge, S.-S., Wen, H.-J., Zhang, C.-F., Ma, X.-H. and Hao, Y. (2013) AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient. Chinese Physics Letters, 30, Article ID: 127201.
http://dx.doi.org/10.1088/0256-307X/30/12/127201

has been cited by the following article:

• TITLE: Polarization and Breakdown Analysis of AlGaN Channel HEMTs with AlN Buffer

  AUTHORS: Godwin Raj, Mohan Kumar, Chandan Kumar Sarkar

  KEYWORDS: AlGaN Channel, Sheet Carrier Concentration Model, N- and Ga-face, Polarization, High Breakdown, Total Induced Net Interface Polarization

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.5 No.3, August 21, 2015

  ABSTRACT: We have demonstrated the first carrier density model for AlGaN channel with AlN buffer using spontaneous and piezoelectric polarization comparison with experimental and theoretical results. From the results we proved that the formation of 2DEG in undoped structure relied both on spontaneous and piezoelectric polarization. The electron distribution of Al concentration (0