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Malik, M.M., Zulfequar, M., Kumar, A. and Husain, M. (1992) Effect of Indium Impurities on the Electrical Properties of Amorphous Ga₃₀Se₇₀. Journal of Physics: Condensed Matter, 4, 331-8338.
http://dx.doi.org/10.1088/0953-8984/4/43/008

has been cited by the following article:

• TITLE: Investigation of the Effect of Film Thickness and Heat Treatment on the Optical Properties of TeSeSn Thin Films

  AUTHORS: A. Elwhab B. Alwany, O. M. Samir, Mohammed A. Algradee, M. M. Hafith, M. A. Abdel-Rahim

  KEYWORDS: Thin Film, Film Thickness, Annealing Temperature, Optical Properties

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.5 No.3, August 21, 2015

  ABSTRACT: Glassy substrates TeSeSn thin films were thermally evaporated onto chemically cleaned glass. The as-deposited (as-prepared) and annealed thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical transmission. The optical absorption of the as-prepared and annealed TeSeSn thin films is studied in the wavelength range of 300 nm - 900 nm. The direct optical energy gap (Eg) increases from 1.989 to 2.143 eV with increasing the thickness of the as-prepared films from 100 to 200 nm. The annealed TeSeSn films showed a decrease in the optical energy gap with increasing the annealing temperature. The effect of heat treatment on the lattice dielectric constant (εL) and carrier concentration (N) are also studied.