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Gosain, D.P., Shimizu, T., Ohmura, M., Suzuki, M., Bando, T. and Okano, S. (1991) Some Properties of Sb2 Te3-x Sex for Nonvolatile Memory Based on Phase Transition. Journal of Materials Science, 26, 3271-3274.
http://dx.doi.org/10.1007/BF01124673
has been cited by the following article:
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TITLE:
Investigation of the Effect of Film Thickness and Heat Treatment on the Optical Properties of TeSeSn Thin Films
AUTHORS:
A. Elwhab B. Alwany, O. M. Samir, Mohammed A. Algradee, M. M. Hafith, M. A. Abdel-Rahim
KEYWORDS:
Thin Film, Film Thickness, Annealing Temperature, Optical Properties
JOURNAL NAME:
World Journal of Condensed Matter Physics,
Vol.5 No.3,
August
21,
2015
ABSTRACT: Glassy substrates TeSeSn thin films were thermally evaporated onto chemically cleaned glass. The as-deposited (as-prepared) and annealed thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical transmission. The optical absorption of the as-prepared and annealed TeSeSn thin films is studied in the wavelength range of 300 nm - 900 nm. The direct optical energy gap (Eg) increases from 1.989 to 2.143 eV with increasing the thickness of the as-prepared films from 100 to 200 nm. The annealed TeSeSn films showed a decrease in the optical energy gap with increasing the annealing temperature. The effect of heat treatment on the lattice dielectric constant (εL) and carrier concentration (N) are also studied.