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Hong, S.N., Ruggles, G.A., Paulos, J.J., Wortman J.J. and Ozturk, M.C. (1988) Formation of Ultrashallow p+-n Junctions by Low-Energy Boron Implantation Using a Modified Ion Implanter. Applied Physics Letters, 53, 1741-1743.
http://dx.doi.org/10.1063/1.100470

has been cited by the following article:

• TITLE: Simple General Purpose Ion Beam Deceleration System Using a Single Electrode Lens

  AUTHORS: J. Lopes, J. Rocha

  KEYWORDS: Deceleration, Low Energy, Positive Ion Beam

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.3 No.3, August 6, 2015

  ABSTRACT: Ion beam deceleration properties of a newly developed low-energy ion beam implantation system were studied. The objective of this system was to produce general purpose low-energy (5 to 15 keV) implantations with high current beam of hundreds of μA level, providing the most wide implantation area possible and allowing continuously magnetic scanning of the beam over the sample(s). This paper describes the developed system installed in the high-current ion implanter at the Laboratory of Accelerators and Radiation Technologies of the Nuclear and Technological Cam-pus, Sacavém, Portugal (CTN).