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Özgür, ü., Alivov, Y.I., Liu, C., Teke, A., Reshchikov, M.A., Dogan, S., Avrutin, V., Cho, S.J. and Morkoç, H. (2005) A Comprehensive Review of ZnO Materials and Devices. Journal of Applied Physics, 98, Article ID: 041301.
http://dx.doi.org/10.1063/1.1992666

has been cited by the following article:

• TITLE: First Principles Study of the Structural and Electronic Properties of the ZnO/Cu2O Heterojunction

  AUTHORS: Mabrouk Zemzemi, Sahbi Alaya

  KEYWORDS: Heterojunction, Structure and Electronic Properties, Band Offsets, Surface Energy, Workfunction, Density Functional Theory, Average Potential Method

  JOURNAL NAME: Materials Sciences and Applications, Vol.6 No.7, July 16, 2015

  ABSTRACT: Many materials have been used in nanostructured devices; the goal of attaining high-efficiency thin-film solar cells in such a way has yet to be achieved. Heterojunctions based on ZnO/Cu2O oxides have recently emerged as promising materials for high-efficiency nanostructured devices. In this work, we are interested in the characterization of the surface and interface through nano-scale modeling based on ab initio (Density Functional Theory (DFT), Local Density Approximation (LDA), Generalized Gradient Approximation (GGA-PBE), and Pseudopotential (PP)). This study aims also to build a supercell containing a ZnO/Cu2O heterojunction and study the structural properties and the discontinuity of the valence band (band offset) from a semiconductor to an-other. We investigate crystal terminations of ZnO (0001) and Cu2O (0001). We calculate the energies of the polar surfaces and the work function in the c-axis for both oxides. We built a zinc oxide layer in the wurtzite structure along the [0001] direction, on which we placed a copper oxide layer in the hexagonal structure (CdI2-type). We choose the method of Van de Walle and Martin to calcu-late the energy offset. This approach fits well with the DFT. Our calculations give us a value that corresponds to other experimental and theoretical values.