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Park, Y.D., Hanbicki, A.T., Erwin, S.C., Hellberg, C.S., Sullivan, J.M., Mattson, J.E., Ambrose, T.F., Wilson, A., Spanos, G. and Jonker, B.T. (2002) A Group-IV Ferromagnetic Semiconductor: MnxGe1-x. Science, 295, 651-654.
http://dx.doi.org/10.1126/science.1066348

has been cited by the following article:

• TITLE: Direct Structural Evidences of Epitaxial Growth Ge1-X MnX Nanocolumn Bi-Layers on Ge(001)

  AUTHORS: Thi Giang Le

  KEYWORDS: GeMn Diluted Magnetic Semiconductors, Muti-Layers, GeMn Nanocolumns, Thin Film, Epitaxial Growth

  JOURNAL NAME: Materials Sciences and Applications, Vol.6 No.6, June 15, 2015

  ABSTRACT: Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of thin films. Based on the observation of changes in RHEED patterns during nanocolumn growth, we used a real-time control approach to realize multilayer structures that consist of two nanocolumn layers separated by a Ge barrier layer. Transmission Electron Microscopy (TEM) has been used to investigate the structural properties of the GeMn nanocolumns and GeMn/Ge nanocolumns bi-layers samples.