TITLE:
Accurate Extraction of Effective Gate Resistance in RF MOSFET
AUTHORS:
Ikkyun Jo, Toshimasa Matsuoka
KEYWORDS:
MOSFET, NQS Effect, Gate Electrode Resistance, Elmore Constant
JOURNAL NAME:
Circuits and Systems,
Vol.6 No.5,
May
22,
2015
ABSTRACT: This
paper describes the gate electrode resistance of MOSFET and non-quasi-static
(NQS) effect for RF operation. The vertical current paths between the silicide
layer and poly-silicon are considered in the gate electrode. The vertical
current paths are not effective in long-channel devices, but become more
significant in short-channel devices. The gate resistance including vertical
current paths can reproduce the practical RF characteristics well. By careful
separation of the above gate electrode resistance and the NQS effect, the
small-signal gate-source admittance can be analyzed with 130-nm CMOS process.
Elmore constant (κ) of the NQS
gate-source resistance is about five for long-channel devices, while it
decreases down to about three for short-channel devices.